? Wavelength Range : 380 ~ 780nm
? Optional Wavelength : consult factory
? Wavelength Accuracy : ±0.5nm
? Optical Bandwidth (with 100 micron slit) : 2.0nm
? Spectral resolution : 100 micron (Standard), 50 & 200 micron (optional)
? Optical focal length : 140nm
? Optical Aperture : f/2
? Operating Temperature : 0 to 40°C
? Spatial Radiation Angle : 0 ~ ±90°
? Optical Probe : 0.01sr (100mm), 0/001sr (316mm)
? Current : 0 ~ 3A
? Voltage : 0 ~ 60V
? SMD LED Chip Probe Station Maximum Luminous Flux : 80 lm

? Resolution :
- 1.5 (at accelerating voltage of 15kV Working distance of 5mm)
- 5.0 (at accelerating voltage of 1kV Working distance of 5mm)
? Magnification : -20x to 500000x
? Electron Optics
- Electron gun : Cold-cathode field emission electron gun (ZrO/W)
- Emission extracting voltage(Vext) : 0 to 6.5 kV
- Schottky emission source Accelerating voltage (Vacc) : 0.5 to 30kV (in increment of 0.1kV/step)
- Lens system : Electromagnetic lens reduction system
- Objective lens aperture : Movable self-cleaning type thin aperture
? Specimen Size : 120 ~ 160 mm dia

? Carrier Concentration : 10E13 ~ 10E-3cm-3
? Type : n- and p- type
? Material : GaN, GaAs, InP, Si
? Sealing ring size
- the large ring : 3.5mm diameter (normally 0.1cm2)
- the small ring : 1mm diameter (normally 0.01cm2)
? Desiding on ring size
- the large ring : At higher carrier concentration (above 5E18cm-3)
- the small ring : carrier concentration (1E13 to 1E20cm-3)

? Discharge Mode : Diode discharge
- Discharge Electrode : ring (63mm diameter)
- Discharge Voltage :DC 2.5kV 0.5kV
- Discharge Current : DC 0 to 30mA
? Standard target : Pt
? Coating rate (Maximum)
- Pt : 6nm/min
? Specimen
- Max dia : 50mm
- Max height : 15mm